MIT 6.774 Physics of Microfabrication: Front End Processing, Fall 2004
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What you'll learn
This course includes
- 25 hours of video
- Certificate of completion
- Access on mobile and TV
Course content
1 modules • 21 lessons • 25 hours of video
MIT 6.774 Physics of Microfabrication: Front End Processing, Fall 2004
21 lessons
• 25 hours
MIT 6.774 Physics of Microfabrication: Front End Processing, Fall 2004
21 lessons
• 25 hours
- 3. Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.) 01:00:36
- 4. Wafer Cleaning and Gettering (cont.) 01:11:30
- 5. Wafer Cleaning and Gettering - Contamination Measurement Techniques 01:16:00
- 6. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models 01:13:37
- 7. Oxidation and the Si/SiO2 Interface. 2D Effects, Doping Effects, Point Defect 01:11:08
- 8. Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic 01:02:52
- 9. Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects 01:00:43
- 10. Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion 01:18:39
- 11. Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques 01:16:02
- 12. Ion Implantation and Annealing - Analytic Models and Monte Carlo 01:16:38
- 13. Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED 01:11:49
- 14. Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction 01:16:51
- 15. Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail 01:00:00
- 16. The SUPREM IV Process Simulator 01:14:08
- 17. Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth 01:10:00
- 18. Thin Film Deposition and Epitaxy - CVD Examples and PVD 01:12:27
- 19. Thin Film Deposition and Epitaxy - Modeling Topography of Deposition 01:12:15
- 20. Etching - Introduction 01:14:36
- 21. Etching - Poly Gate Etching, Stringers, Modeling of Etching 01:12:08
- 22. Silicides, Device Contacts, Novel Gate Materials 01:18:49
- 23. Growth and Processing of Strained Si/SiGe and Stress Effects on Devices 01:12:44
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